Characterization of V2O3 Nanoscale Thin Films Prepared by DC Magnetron Sputtering Technique

Vanadium sesquioxide V2O3, a transition metal oxide, is an important insulator due to its potential applications in novel electronic and memory devices. V2O3 thin films of thickness around 230 nm were grown on Si/SiO2/Ti/Pt substrates at deposition temperature 723 K controlled Ar:O2 atmosphere 35:2.5 sccm employing Direct Current (DC) magnetron sputtering. X-ray diffraction studies confirmed single phase the material stabilized corundum rhombohedral R3¯C phase. photoelectron spectroscopic results revealed chemical oxidation states are V3+ O2− have nearly stochiometric elemental compositions films. Magnetization down 10 predicts canted antiferromagnetic 55 K. Out 7 expected Raman active modes (2A1g + 5Eg), two A1g 242 500 cm−1 observed ambient Temperature dependent carried out from 80 300 identified monoclinic ~143